Invention Grant
US07659766B2 Semiconductor integrated circuit device enabling to produce a stable constant current even on a low power-source voltage
有权
半导体集成电路器件即使在低电源电压下也能够产生稳定的恒定电流
- Patent Title: Semiconductor integrated circuit device enabling to produce a stable constant current even on a low power-source voltage
- Patent Title (中): 半导体集成电路器件即使在低电源电压下也能够产生稳定的恒定电流
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Application No.: US11004807Application Date: 2004-12-07
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Publication No.: US07659766B2Publication Date: 2010-02-09
- Inventor: Hideki Ishida , Megumi Oono
- Applicant: Hideki Ishida , Megumi Oono
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Arent Fox LLP
- Priority: JP2002-218433 20020726
- Main IPC: H03L5/00
- IPC: H03L5/00
Abstract:
A semiconductor integrated circuit device has a first MIS transistor of a first conductivity type, a second MIS transistor of a second conductivity type, a resistor connected in series between a first power-source line and a second power-source line, and a third MIS transistor of the first conductivity type. The third MIS transistor has a gate connected to a node where the first MIS transistor and the second MIS transistor are connected together, and a drain connected to a connection node where the second MIS transistor and the resistor are connected together.
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