Invention Grant
- Patent Title: High frequency switching circuit
- Patent Title (中): 高频开关电路
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Application No.: US12099858Application Date: 2008-04-09
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Publication No.: US07659770B2Publication Date: 2010-02-09
- Inventor: Takayuki Teraguchi , Katsue Kawakyu
- Applicant: Takayuki Teraguchi , Katsue Kawakyu
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-108284 20070417
- Main IPC: H03K3/01
- IPC: H03K3/01

Abstract:
A high frequency switching circuit is disclosed. The high frequency switching circuit is provided with first and second high frequency signal terminals, a control terminal, a field-effect transistor having a drain, a source and a gate. The field-effect transistor is connected between the first and the second high frequency signal terminals so as to switch a high frequency signal. The high frequency switching circuit is further provided with a variable resistance circuit which is connected between the gate of the field-effect transistor and the control terminal.
Public/Granted literature
- US20080258799A1 HIGH FREQUENCY SWITCHING CIRCUIT Public/Granted day:2008-10-23
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