Invention Grant
- Patent Title: Semiconductor integrated circuit device and power control method thereof
- Patent Title (中): 半导体集成电路器件及其功率控制方法
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Application No.: US12022680Application Date: 2008-01-30
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Publication No.: US07659773B2Publication Date: 2010-02-09
- Inventor: Chang-Jun Choi , Suhwan Kim
- Applicant: Chang-Jun Choi , Suhwan Kim
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0010156 20070131
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02
Abstract:
A semiconductor IC includes a logic block, and a voltage control circuit controlling an operating voltage supplied into the logic block. The voltage control circuit controls the operating voltage to be increased in a stepwise fashion during an initial operation of the logic block.
Public/Granted literature
- US20080180157A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND POWER CONTROL METHOD THEREOF Public/Granted day:2008-07-31
Information query
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