Invention Grant
- Patent Title: High speed CMOS image sensor circuits with memory readout
- Patent Title (中): 具有块存储器读数的高速CMOS图像传感器电路
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Application No.: US11243239Application Date: 2005-10-04
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Publication No.: US07659925B2Publication Date: 2010-02-09
- Inventor: Alexander Krymski
- Applicant: Alexander Krymski
- Agency: Foley & Lardner LLP
- Main IPC: H04N5/228
- IPC: H04N5/228 ; H04N3/14 ; H04N5/335 ; H01L27/00 ; H03M1/12

Abstract:
An image sensor circuit includes a pixel array, a plurality of column analog-to-digital conversion (ADC) circuits, and at least two memory blocks. Each column ADC circuit is connected to receive analog pixel signals provided from corresponding pixel circuits of the pixel array, and is configured to convert the received analog pixel signals into digital pixel signals. Each memory block is connected to receive digital pixel signals provided from corresponding column ADC circuits of the plurality of column ADC circuits. At least two of the at least two memory blocks are connected to receive digital pixel signals that are provided from corresponding column ADC circuits that are located to a same side of the pixel array. Each memory block of the at least two memory blocks includes a plurality of memory cells, one or more sense amplifiers connected to the memory cells by a readout bus, and a memory controller.
Public/Granted literature
- US20070076109A1 High speed CMOS image sensor circuits with block memory readout Public/Granted day:2007-04-05
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