A solid-state imaging apparatus comprising a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels, reading out parts, each comprising a reading out electrode, wherein the reading out electrode and at least one of transfer electrodes adjoining to the reading out electrode are adjoining to same photo electric conversion element is characterized by that electric charge accumulated in each photo electric conversion element is transferred by every other line of vertical electric charge transfer channels in the vertical direction. The solid-state imaging apparatus can prevent color mixture even when the inter-VCCD blooming is occurred.