Invention Grant
US07660058B2 Methods for etching layers within a MEMS device to achieve a tapered edge
失效
用于蚀刻MEMS器件内的层以实现锥形边缘的方法
- Patent Title: Methods for etching layers within a MEMS device to achieve a tapered edge
- Patent Title (中): 用于蚀刻MEMS器件内的层以实现锥形边缘的方法
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Application No.: US11506770Application Date: 2006-08-18
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Publication No.: US07660058B2Publication Date: 2010-02-09
- Inventor: Chengbin Qiu , Teruo Sasagawa , Ming-Hau Tung , Chun-Ming Wang , Stephen Zee
- Applicant: Chengbin Qiu , Teruo Sasagawa , Ming-Hau Tung , Chun-Ming Wang , Stephen Zee
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; B44C1/22
Abstract:
Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.
Public/Granted literature
- US20080218840A1 Methods for etching layers within a MEMS device to achieve a tapered edge Public/Granted day:2008-09-11
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