Invention Grant
- Patent Title: TMR element having a tunnel barrier which includes crystalline portions and non-crystalline portions
- Patent Title (中): 具有隧道势垒的TMR元件包括结晶部分和非结晶部分
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Application No.: US11500379Application Date: 2006-08-08
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Publication No.: US07660082B2Publication Date: 2010-02-09
- Inventor: Takumi Uesugi , Satoshi Miura , Takeo Kagami
- Applicant: Takumi Uesugi , Satoshi Miura , Takeo Kagami
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2005-232302 20050810
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11C11/14
Abstract:
A magneto-resistive element has a lower layer, a tunnel barrier layer, and an upper layer. The lower layer, the tunnel barrier layer, and the upper layer are disposed adjacent to each other and are stacked in this order. A magnetization direction of either of the lower layer and the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other layer is variable in accordance with the external magnetic field. A crystalline portion and a non-crystalline portion co-exist in a plane that is parallel with a surface of the tunnel barrier layer.
Public/Granted literature
- US20070053114A1 TMR element having a tunnel barrier which includes crystalline portions and non-crystalline portions Public/Granted day:2007-03-08
Information query
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