Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11358226Application Date: 2006-02-22
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Publication No.: US07660085B2Publication Date: 2010-02-09
- Inventor: Hiroshi Furuta , Kenji Hibino , Hidetaka Natsume , Toshikatsu Jinbo , Kiyokazu Hashimoto
- Applicant: Hiroshi Furuta , Kenji Hibino , Hidetaka Natsume , Toshikatsu Jinbo , Kiyokazu Hashimoto
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2005-046457 20050223
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
A conventional layout of power supply protective element cannot sufficiently protect an internal circuit against a surge current that flows into a narrow branch line that branches off from a thick main wiring line. A semiconductor device according to an embodiment of the present invention includes a power supply protective element connected around a terminal; a main wiring line connected with a VCC pad or a GND pad; a branch line that branches off from the main wiring line and applies a power supply potential or a ground potential to a functional block of the semiconductor device; a branching portion at which the branch line branches off from the main wiring line; and an internal power supply protective element connected with the branch line.
Public/Granted literature
- US20060187733A1 Semiconductor device Public/Granted day:2006-08-24
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