Invention Grant
- Patent Title: Overcurrent detecting circuit and semiconductor device
- Patent Title (中): 过电流检测电路及半导体器件
-
Application No.: US12076404Application Date: 2008-03-18
-
Publication No.: US07660091B2Publication Date: 2010-02-09
- Inventor: Sakae Nakajima
- Applicant: Sakae Nakajima
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-074943 20070322
- Main IPC: H02H3/08
- IPC: H02H3/08 ; H02H5/04

Abstract:
A highly precise temperature compensation is applied in the detection of overcurrent. A control circuit detects a potential difference produced across a wire owing to the resistance of the wire and a load current that flows into the wire, which connects an NMOS transistor and an output terminal, and controls the NMOS transistor so as to limit the load current if the potential difference exceeds a prescribed value. The control circuit 20 includes a first diode group having a first end from which a first current is passed in a forward direction by a first current source and a second end connected to a first end of the wire, and a second diode group having a first end from which a second current is passed in a forward direction by a second current source and a second end connected to a second end of the wire. The prescribed value is corrected based upon a potential difference across the first ends of the first and second diode groups so as to reduce a change in output-current limit value produced a change in resistance of the metal wire with temperature.
Public/Granted literature
- US20080232017A1 Overcurrent detecting circuit and semiconductor device Public/Granted day:2008-09-25
Information query