Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12331709Application Date: 2008-12-10
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Publication No.: US07660130B2Publication Date: 2010-02-09
- Inventor: Seiya Fujii
- Applicant: Seiya Fujii
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2007-321751 20071213
- Main IPC: H05K7/02
- IPC: H05K7/02 ; H05K7/06 ; H05K7/08 ; H05K7/10

Abstract:
A semiconductor device includes: a wiring substrate including multiple connection pads provided on a top surface thereof and multiple lands that are provided on a bottom surface thereof and electrically connected to the corresponding connection pads; a semiconductor chip mounted on the top surface of the wiring substrate and electrically connected to the connection pads; a solder resist deposited on the bottom surface of the wiring substrate and having multiple openings to which the lands are respectively exposed, each of the openings being shifted with respect to a corresponding land of the lands; multiple external terminals connected respectively to the lands through the openings; and a dummy wiring arranged on the bottom surface of the wiring substrate and separately from the corresponding land so that a corresponding external terminal of the external terminals is connected to the corresponding land and the dummy wiring partially exposed to the corresponding opening.
Public/Granted literature
- US20090154125A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2009-06-18
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