Invention Grant
- Patent Title: High-performance one-transistor memory cell
- Patent Title (中): 高性能单晶体管存储单元
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Application No.: US11477315Application Date: 2006-06-28
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Publication No.: US07660144B2Publication Date: 2010-02-09
- Inventor: Arup Bhattacharyya
- Applicant: Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C17/06
- IPC: G11C17/06
Abstract:
A memory cell embodiment includes an access transistor having a floating node, and a diode connected between the floating node and a diode reference potential line. The diode includes an anode, a cathode, and an intrinsic region between the anode and the cathode. A charge representative of a memory state of the memory cell is held across the intrinsic region of the diode.
Public/Granted literature
- US20060245244A1 High-performance one-transistor memory cell Public/Granted day:2006-11-02
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