Invention Grant
- Patent Title: Storage device and semiconductor device
- Patent Title (中): 存储设备和半导体器件
-
Application No.: US11474944Application Date: 2006-06-27
-
Publication No.: US07660145B2Publication Date: 2010-02-09
- Inventor: Ryoji Nomura
- Applicant: Ryoji Nomura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-194077 20050701
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
An object of the present invention is to provide nonvolatile, rewritable, easily-manufactured, and inexpensive storage element, storage device, and semiconductor device, which are superior in switching characteristics and which has low operation voltage. In an element including a first conductive layer, a second conductive layer facing the first conductive layer, and a layer containing at least one kind of an organic compound provided between the first conductive layer and the second conductive layer, the organic compound can be electrochemically doped or dedoped. By feeding current in this element, the organic compound provided between the conductive layers is electrochemically doped, i.e., electrons are transported, whereby the conductivity can be increased by about three to ten digits.
Public/Granted literature
- US20070001167A1 Storage device and semiconductor device Public/Granted day:2007-01-04
Information query