Invention Grant
- Patent Title: Ferroelectric recording medium
- Patent Title (中): 铁电记录介质
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Application No.: US11494505Application Date: 2006-07-28
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Publication No.: US07660146B2Publication Date: 2010-02-09
- Inventor: Simon Buehlmann , Seung-bum Hong
- Applicant: Simon Buehlmann , Seung-bum Hong
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2005-0069115 20050728
- Main IPC: G11C11/22
- IPC: G11C11/22

Abstract:
Provided are a ferroelectric recording medium and a method of manufacturing the same. The ferroelectric recording medium includes a substrate, a plurality of supporting layers which are formed on the substrate, each of the supporting layers having at least two lateral surfaces; and data recording layers formed on the lateral surfaces of the supporting layers. First and second data recording layers may be respectively disposed on two facing lateral surfaces of each of the supporting layers. The supporting layers may be polygonal pillars having at least three lateral surfaces. A plurality of the supporting layers can be disposed at uniform intervals in a two-dimensional array.
Public/Granted literature
- US20080102290A1 Ferroelectric recording medium and method of manufacturing the same Public/Granted day:2008-05-01
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