Invention Grant
US07660147B2 Programming method for phase change memory 有权
相变存储器的编程方法

Programming method for phase change memory
Abstract:
A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.
Public/Granted literature
Information query
Patent Agency Ranking
0/0