Invention Grant
- Patent Title: Programming method for phase change memory
- Patent Title (中): 相变存储器的编程方法
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Application No.: US11959108Application Date: 2007-12-18
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Publication No.: US07660147B2Publication Date: 2010-02-09
- Inventor: Te-Sheng Chao , Ming-Jung Chen , Philip H. Yeh , Ming-Jinn Tsai
- Applicant: Te-Sheng Chao , Ming-Jung Chen , Philip H. Yeh , Ming-Jinn Tsai
- Applicant Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nany Technology Corporation.,Promos Technologies Inc.,Winbond Electronics Corp.
- Current Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nany Technology Corporation.,Promos Technologies Inc.,Winbond Electronics Corp.
- Current Assignee Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Agency: Quintero Law Office
- Priority: TW95148760A 20061225
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.
Public/Granted literature
- US20080151613A1 PROGRAMMING METHOD FOR PHASE CHANGE MEMORY Public/Granted day:2008-06-26
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