A nonvolatile memory device is disclosed. The nonvolatile memory device includes a source selector transistor connected at one end thereof to a source line, a plurality of cell selector transistors connected in series with each other and to the other end of said source selector transistor and a basic memory unit including a variable resistor element which is constituted as a memory element to store bit information and is provided for each of said cell selector transistors, being connected at one end thereof to the drain terminal of said cell selector transistor and connected at the other end thereof to the bit line. The source selector transistor and said cell selector transistor provided between one end of said variable resistor element to be accessed and said source line are controlled to turn on.