Invention Grant
- Patent Title: Non-volatile memory device and method of driving the same
- Patent Title (中): 非易失性存储器件及其驱动方法
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Application No.: US11951556Application Date: 2007-12-06
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Publication No.: US07660155B2Publication Date: 2010-02-09
- Inventor: Dae-seok Byeon
- Applicant: Dae-seok Byeon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0019923 20070227
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A non-volatile memory device capable of stably setting its operating environment and a method of driving the non-volatile memory device are provided. The method includes providing power to the non-volatile memory device having a memory cell array that stores initial setting data for setting the operating environment of the non-volatile memory device. An initial read operation is performed on the memory cell array. The operating environment of the non-volatile memory device is set using the initial setting data that is read through the initial read operation. The initial setting data stored in the memory cell array includes main data having information about the operating environment to be set and an indicator corresponding to the main data for indicating a start and an end of the main data.
Public/Granted literature
- US20080205151A1 Non-Volatile Memory Device and Method of Driving the Same Public/Granted day:2008-08-28
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