Invention Grant
- Patent Title: Flash memory device and method of operating the same
- Patent Title (中): 闪存设备及其操作方法
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Application No.: US11962060Application Date: 2007-12-20
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Publication No.: US07660160B2Publication Date: 2010-02-09
- Inventor: You Sung Kim , Duck Ju Kim
- Applicant: You Sung Kim , Duck Ju Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0007046 20070123
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.
Public/Granted literature
- US20080175059A1 FLASH MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2008-07-24
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