Invention Grant
- Patent Title: Method for estimating threshold voltage of semiconductor device
- Patent Title (中): 半导体器件阈值电压估算方法
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Application No.: US11644649Application Date: 2006-12-22
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Publication No.: US07660164B2Publication Date: 2010-02-09
- Inventor: Sang Hun Kwak
- Applicant: Sang Hun Kwak
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Fortney
- Priority: KR10-2005-0133891 20051229
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method is provided, which can improve the efficiency of device design by estimating the variation of threshold voltage according to the pulse widths of applied voltage for a semiconductor device in mass product.
Public/Granted literature
- US20070153586A1 Method for estimating threshold voltage of semiconductor device Public/Granted day:2007-07-05
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