Invention Grant
- Patent Title: Memory device and semiconductor device
- Patent Title (中): 存储器件和半导体器件
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Application No.: US11410087Application Date: 2006-04-25
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Publication No.: US07660165B2Publication Date: 2010-02-09
- Inventor: Nobuharu Ohsawa
- Applicant: Nobuharu Ohsawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-132816 20050428
- Main IPC: G11C11/03
- IPC: G11C11/03 ; G11C16/00
Abstract:
A memory device has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase.
Public/Granted literature
- US20060246643A1 Memory device and semiconductor device Public/Granted day:2006-11-02
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