Invention Grant
- Patent Title: Method of improving programming precision in flash memory
- Patent Title (中): 提高闪存编程精度的方法
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Application No.: US11836158Application Date: 2007-08-09
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Publication No.: US07660166B2Publication Date: 2010-02-09
- Inventor: Menahem Lasser
- Applicant: Menahem Lasser
- Applicant Address: IL Kfar Saba
- Assignee: Sandisk IL Ltd.
- Current Assignee: Sandisk IL Ltd.
- Current Assignee Address: IL Kfar Saba
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C7/00
Abstract:
Data are stored in cells of a flash memory by assigning a first portion of the data to be stored in a first cell and a second portion of the data to be stored in one or more second cells. The first cell is programmed to store the first portion in accordance with the second portion. The second cell(s) is/are programmed to store the second portion. At least a portion of the programming of the first cell is effected before any of the programming of the second cell(s).
Public/Granted literature
- US20080181000A1 Method Of Improving Programming Precision In Flash Memory Public/Granted day:2008-07-31
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