Invention Grant
- Patent Title: Memory device and method for fast cross row data access
- Patent Title (中): 用于快速跨行数据访问的存储器件和方法
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Application No.: US11391535Application Date: 2006-03-28
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Publication No.: US07660167B1Publication Date: 2010-02-09
- Inventor: Manoj Roge , Rajesh Manapat
- Applicant: Manoj Roge , Rajesh Manapat
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C7/10
- IPC: G11C7/10
Abstract:
A memory device can provide burst access to row boundary crossing addresses without introducing inter-burst latency. Address locations for a first row of the burst can be accessed at speed, while a prefetch latch can be accessed in lieu of a next row.
Information query
