Invention Grant
- Patent Title: Area efficient first-in first-out circuit
- Patent Title (中): 区域有效的先进先出电路
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Application No.: US12119548Application Date: 2008-05-13
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Publication No.: US07660178B2Publication Date: 2010-02-09
- Inventor: Danny C. Vogel , David B. Hildebrand
- Applicant: Danny C. Vogel , David B. Hildebrand
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Luedeka, Neely & Graham, P.C.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A FIFO memory having an available capacity of no more than N words deep by M bits wide. A write port receives data to store in the FIFO memory, and a read port provides the data stored in the FIFO memory. X memories store the data, where each of the X memories has a size of N/X by M. Control logic receives the data from the write port, writes the data into at least one of the X memories in a serial write manner, reads the data from at least one of the X memories in a serial read manner, and provides the data to the read port. The control logic also disables power to selected ones of the X memories when they are not being written to or read from. The FIFO memory is configured to both read and write the data at a given time to a given one of the X memories.
Public/Granted literature
- US20090285045A1 Area Efficient First-In First-Out circuit Public/Granted day:2009-11-19
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