Invention Grant
US07660181B2 Method of making non-volatile memory cell with embedded antifuse
有权
制造具有嵌入式反熔丝的非易失性存储单元的方法
- Patent Title: Method of making non-volatile memory cell with embedded antifuse
- Patent Title (中): 制造具有嵌入式反熔丝的非易失性存储单元的方法
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Application No.: US11819595Application Date: 2007-06-28
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Publication No.: US07660181B2Publication Date: 2010-02-09
- Inventor: Tanmay Kumar , S. Brad Herner
- Applicant: Tanmay Kumar , S. Brad Herner
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Foley & Lardner LLP
- Main IPC: G11C17/18
- IPC: G11C17/18 ; G11C11/00 ; G11C11/36
Abstract:
A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a first diode portion, a second diode portion and an antifuse separating the first diode portion from the second diode portion, and forming a second electrode over the at least one nonvolatile memory cell.
Public/Granted literature
- US20080013364A1 Method of making non-volatile memory cell with embedded antifuse Public/Granted day:2008-01-17
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