Invention Grant
- Patent Title: Semiconductor device and test method of semiconductor device
- Patent Title (中): 半导体器件的半导体器件和测试方法
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Application No.: US11388479Application Date: 2006-03-23
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Publication No.: US07660257B2Publication Date: 2010-02-09
- Inventor: Takanori Yoshimatsu
- Applicant: Takanori Yoshimatsu
- Applicant Address: JP
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP
- Agency: DLA Piper LLP (US)
- Priority: JPP2005-089485 20050325
- Main IPC: G08C15/00
- IPC: G08C15/00

Abstract:
There is provided a semiconductor device comprising, a function unit portion including a circuit element, rank data presenting results of a rank-classification test on the circuit element, the rank-classification test being performed on the basis of a plurality of test criteria on wafer state, a non-volatile memory portion in which the rank data are stored, and a control portion reading out the rank data from the non-volatile memory portion, the control portion being used in a product test after packaging.
Public/Granted literature
- US20070007521A1 Semiconductor device and test method of semiconductor device Public/Granted day:2007-01-11
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