Invention Grant
- Patent Title: Atomic layer deposition apparatus
- Patent Title (中): 原子层沉积装置
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Application No.: US11423535Application Date: 2006-06-12
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Publication No.: US07660644B2Publication Date: 2010-02-09
- Inventor: Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
- Applicant: Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: G06F19/00
- IPC: G06F19/00
Abstract:
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
Public/Granted literature
- US20060223286A1 ATOMIC LAYER DEPOSITION APPARATUS Public/Granted day:2006-10-05
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