Invention Grant
- Patent Title: S-matrix technique for circuit simulation
- Patent Title (中): 电路仿真的S矩阵技术
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Application No.: US11200449Application Date: 2005-08-09
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Publication No.: US07660708B2Publication Date: 2010-02-09
- Inventor: Houfei Chen
- Applicant: Houfei Chen
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wong, Cabello, Lutsch, Rutherford & Brucculeri, LLP
- Main IPC: G06F7/60
- IPC: G06F7/60 ; G06F17/50
Abstract:
A methodology for combining two or more S-parameter blocks/matrices (each representing a circuit or network, or the interconnection between a circuit or network) into a single S-matrix are described. Such a matrix may be beneficially used to simulate the circuit or network represented by the multiply interconnected circuits or networks.
Public/Granted literature
- US20070038428A1 S-matrix technique for circuit simulation Public/Granted day:2007-02-15
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