Invention Grant
- Patent Title: Apparatus for detecting temperature using transistors
- Patent Title (中): 使用晶体管检测温度的装置
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Application No.: US11584651Application Date: 2006-10-23
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Publication No.: US07661879B2Publication Date: 2010-02-16
- Inventor: Yoon-Jae Shin , Sang-Jin Byun
- Applicant: Yoon-Jae Shin , Sang-Jin Byun
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2005-0107049 20051109
- Main IPC: G01K7/01
- IPC: G01K7/01
Abstract:
An apparatus for detecting a temperature using transistors includes a plurality of temperature detecting units that become selectively active according to predetermined temperature intervals; and a detection signal output unit that generates detection signals according to the signals transmitted by the plurality of temperature detecting units, and outputs the detection signals.
Public/Granted literature
- US20070120551A1 Apparatus for detecting temperature using transistors Public/Granted day:2007-05-31
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