To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition.Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).