Invention Grant
- Patent Title: Silicon nanosized linear body and a method for producing a silicon nanosized linear body
- Patent Title (中): 硅纳米线状体和硅纳米线状体的制造方法
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Application No.: US11791619Application Date: 2005-11-29
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Publication No.: US07662355B2Publication Date: 2010-02-16
- Inventor: Koichi Kamisako , Min Sung Jeon
- Applicant: Koichi Kamisako , Min Sung Jeon
- Applicant Address: JP Fuchu-shi, Tokyo
- Assignee: National University Corporation Tokyo University of Agriculture and Technology
- Current Assignee: National University Corporation Tokyo University of Agriculture and Technology
- Current Assignee Address: JP Fuchu-shi, Tokyo
- Agent Manabu Kanesaka
- Priority: JP2004-345041 20041129
- International Application: PCT/JP2005/022397 WO 20051129
- International Announcement: WO2006/057464 WO 20060601
- Main IPC: C01B33/02
- IPC: C01B33/02 ; B01J21/00
Abstract:
Silicon nanosized linear bodies with different structures and properties can be produced by appropriately setting the condition for the pretreatment by a radical (reaction condition of a hydrogen radical, e.g. concentration). A silicon nanosized linear body is produced from a silicon radical active species in the presence of a catalyst. The catalyst is at least one selected from Ga, Ga compound, In, In compound, Tl and Tl compound that are pretreated by a radical.
Public/Granted literature
- US20080044336A1 Silicon Nanosized Linear Body and a Method for Producing a Silicon Nanosized Linear Body Public/Granted day:2008-02-21
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