Invention Grant
- Patent Title: Method of refining Si
- Patent Title (中): 精炼Si的方法
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Application No.: US11883280Application Date: 2006-02-09
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Publication No.: US07662356B2Publication Date: 2010-02-16
- Inventor: Shinji Tokumaru , Kensuke Okazawa , Jirou Kondou , Masaki Okajima
- Applicant: Shinji Tokumaru , Kensuke Okazawa , Jirou Kondou , Masaki Okajima
- Applicant Address: JP Tokyo
- Assignee: Nippon Steel Materials Co., Ltd.
- Current Assignee: Nippon Steel Materials Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kenyon & Kenyon LLP
- Priority: JP2005-032822 20050209
- International Application: PCT/JP2006/302674 WO 20060209
- International Announcement: WO2006/085679 WO 20060817
- Main IPC: C01B33/02
- IPC: C01B33/02 ; C01B33/07

Abstract:
The present invention provides a method of refining low purity Si by a slag, in particular removing B, which suppresses wear of the reaction vessel due to the slag and produces high purity Si used for solar battery materials etc. at a low cost, comprising adding SiO2 and an alkali oxide or alkali carbonate as a slag material into molten Si to form a slag during which adding one or more types of materials among materials the same as the reaction vessel material used or ingredients included in the reaction vessel material into the slag so as to remove the impurities in the molten Si.
Public/Granted literature
- US20080145294A1 Method of Refining Si Public/Granted day:2008-06-19
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