Invention Grant
US07662488B2 Nitride-based semiconductor substrate and method of making the same
有权
基于氮化物的半导体衬底及其制造方法
- Patent Title: Nitride-based semiconductor substrate and method of making the same
- Patent Title (中): 基于氮化物的半导体衬底及其制造方法
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Application No.: US11357428Application Date: 2006-02-21
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Publication No.: US07662488B2Publication Date: 2010-02-16
- Inventor: Yuichi Oshima
- Applicant: Yuichi Oshima
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group PLLC
- Priority: JP2005-319630 20051102
- Main IPC: B32B9/00
- IPC: B32B9/00 ; B32B19/00
Abstract:
A nitride-based semiconductor substrate having a diameter of 25 mm or more, a thickness of 250 micrometers or more, and an optical absorption coefficient of less than 7 cm−1 to light with a wavelength of 380 nm or more. The nitride-based semiconductor substrate is made by the HVPE method that uses gallium chloride obtained by reacting a Ga melt with a hydrogen chloride gas. The Ga melt is contacted with the hydrogen chloride gas for one minute or more to produce the gallium chloride.
Public/Granted literature
- US20070096147A1 Nitride-based semiconductor substrate and method of making the same Public/Granted day:2007-05-03
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