Invention Grant
- Patent Title: High-transmittance attenuated phase-shift mask blank
- Patent Title (中): 高透光衰减相移掩模空白
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Application No.: US11244227Application Date: 2005-10-06
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Publication No.: US07662520B2Publication Date: 2010-02-16
- Inventor: Fu-Der Lai
- Applicant: Fu-Der Lai
- Applicant Address: TW Taohsiung
- Assignee: National Kaohsiung First University of Science and Technology
- Current Assignee: National Kaohsiung First University of Science and Technology
- Current Assignee Address: TW Taohsiung
- Agency: Rosenberg, Klein & Lee
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
The present invention discloses a HT-AttPSM (high-transmittance attenuated phase-shift mask) blank with phase-shifters composed of the (Al2O3)x/(TiO2)1-x superlattice film stacks, wherein x preferably ranges 79˜84%. Particularly, the four-stacked superlattice films of the present invention perform superior optical properties including transmittance of 19.9% and a reflectance of 3.2% at the wavelength of 193 nm and an inspection transmittance less than 20% at the wavelength of 257 nm.
Public/Granted literature
- US20070082274A1 High-transmittance attenuated phase-shift mask blank Public/Granted day:2007-04-12
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