The formation of a chrome-less phase shifting mask includes preparing a mask substrate with a chrome metal layer, forming main and complementary pattern portions in the chrome metal layer, removing a remaining layer of radiation sensitive material, forming a layer of radiation sensitive material over the complementary pattern portion, etching the main pattern portion of the mask substrate using the patterned chrome metal layer as an etch mask, removing remaining portions of the chrome layer from the main pattern portion and removing the layer of radiation sensitive material over the complementary pattern portion. The fabrication of a chrome-less phase shifting mask includes combining writing a phase layer and a chrome layer into a single write step in a chrome-less phase shifting mask fabrication process, wherein an overlay shift is prevented between the phase layer and the chrome layer. A phase edge is not formed between a juncture of a main pattern region and a scribe region of the mask during fabrication of the mask.