Invention Grant
- Patent Title: Pattern forming method and semiconductor device manufacturing method
- Patent Title (中): 图案形成方法和半导体器件制造方法
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Application No.: US11342048Application Date: 2006-01-30
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Publication No.: US07662542B2Publication Date: 2010-02-16
- Inventor: Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
- Applicant: Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-023923 20050131
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/004
Abstract:
A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.
Public/Granted literature
- US20060189147A1 Pattern forming method and semiconductor device manufacturing method Public/Granted day:2006-08-24
Information query
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