Invention Grant
US07662658B2 Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
有权
具有超浅结的光电二极管，用于高量子效率CMOS图像传感器和形成方法
- Patent Title: Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
- Patent Title (中): 具有超浅结的光电二极管，用于高量子效率CMOS图像传感器和形成方法
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Application No.: US11783040Application Date: 2007-04-05
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Publication No.: US07662658B2Publication Date: 2010-02-16
- Inventor: Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
- Applicant: Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface latter has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.
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