Invention Grant
- Patent Title: Method of processing wafer
- Patent Title (中): 晶圆处理方法
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Application No.: US11998045Application Date: 2007-11-28
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Publication No.: US07662666B2Publication Date: 2010-02-16
- Inventor: Koichi Kondo
- Applicant: Koichi Kondo
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer, Burns & Crain, Ltd.
- Priority: JP2006-324921 20061130
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An underfill material is provided on the surface of a wafer in such a manner as to cover bumps, then the wafer is irradiated with a laser beam from the surface thereof and along planned cutting lines so as to remove an insulation layer and the underfill material present over the planned cutting lines, and the debris generated in this instance are deposited on the underfill material and are thereby prevented from being deposited on the wafer surface and/or on the bumps. Subsequently, a surface layer of the underfill material is cut so as to make the bumps flush in height and to expose the tips of the bumps.
Public/Granted literature
- US20080132035A1 Method of processing wafer Public/Granted day:2008-06-05
Information query
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