Invention Grant
US07662674B2 Methods of forming electromigration and thermal gradient based fuse structures
有权
形成电迁移和基于热梯度的熔丝结构的方法
- Patent Title: Methods of forming electromigration and thermal gradient based fuse structures
- Patent Title (中): 形成电迁移和基于热梯度的熔丝结构的方法
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Application No.: US11133835Application Date: 2005-05-20
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Publication No.: US07662674B2Publication Date: 2010-02-16
- Inventor: Jose A. Maiz , Jun He , Mark Bohr
- Applicant: Jose A. Maiz , Jun He , Mark Bohr
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kathy J. Ortiz
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/336
Abstract:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least one via.
Public/Granted literature
- US20060261437A1 Methods of forming electromigration and thermal gradient based fuse structures Public/Granted day:2006-11-23
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