Invention Grant
US07662682B2 Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
有权
在100毫米直径的碳化硅衬底上高度均匀的III族氮化物外延层
- Patent Title: Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
- Patent Title (中): 在100毫米直径的碳化硅衬底上高度均匀的III族氮化物外延层
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Application No.: US12118947Application Date: 2008-05-12
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Publication No.: US07662682B2Publication Date: 2010-02-16
- Inventor: Adam William Saxler , Edward Lloyd Hutchins
- Applicant: Adam William Saxler , Edward Lloyd Hutchins
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Summa, Additon & Ashe, P.A.
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A method for epitaxial growth of Group III nitrides on a substrate using source gases consistent with metal organic chemical vapor deposition is provided. A heterostructure formed from two Group III nitride epitaxial layers is grown on a substrate in an atmosphere containing minimal hydrogen. The two Group III nitride epitaxial layers differ sufficiently in composition from one another in order to generate a two-dimensional electron gas at their interface. The substrate upon which the heterostructure is grown has a diameter of at least 100 mm.
Public/Granted literature
- US20080302298A1 Highly Uniform Group III Nitride Epitaxial Layers on 100 Millimeter Diameter Silicon Carbide Substrates Public/Granted day:2008-12-11
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