Invention Grant
- Patent Title: Method of forming isolation structure of semiconductor device
- Patent Title (中): 形成半导体器件隔离结构的方法
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Application No.: US11416738Application Date: 2006-05-02
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Publication No.: US07662697B2Publication Date: 2010-02-16
- Inventor: Jung Ryul Ahn , Byung Soo Park
- Applicant: Jung Ryul Ahn , Byung Soo Park
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2005-0037110 20050503
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method of forming a semiconductor device includes etching a semiconductor substrate to form a first trench having a first width and a first depth; etching the semiconductor substrate to form a second trench having a second width and a second depth, the second trench overlapping the first trench, the second width being greater than the first width, the second depth being less than the first depth, whereby a trench having a dual structure is formed; and forming a first isolation structure within the trench having the dual structure. An embodiment of the present invention relates to a method of forming an isolation structure of a semiconductor device.
Public/Granted literature
- US20060252257A1 Method of forming isolation structure of semiconductor device Public/Granted day:2006-11-09
Information query
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