Invention Grant
- Patent Title: Method for manufacturing a crystalline silicon layer
- Patent Title (中): 晶体硅层的制造方法
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Application No.: US11146564Application Date: 2005-06-07
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Publication No.: US07662702B2Publication Date: 2010-02-16
- Inventor: Dries Els Victor Van Gestel , Guy Beaucarne
- Applicant: Dries Els Victor Van Gestel , Guy Beaucarne
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed.
Public/Granted literature
- US20060030132A1 Method for manufacturing a crystalline silicon layer Public/Granted day:2006-02-09
Information query
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