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US07662710B2 Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane 有权
使用薄介电膜形成贯通晶片电互连和其他结构

  • Patent Title: Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane
  • Patent Title (中): 使用薄介电膜形成贯通晶片电互连和其他结构
  • Application No.: US12418923
    Application Date: 2009-04-06
  • Publication No.: US07662710B2
    Publication Date: 2010-02-16
  • Inventor: Lior Shiv
  • Applicant: Lior Shiv
  • Applicant Address: DK Alleroed
  • Assignee: Hymite A/S
  • Current Assignee: Hymite A/S
  • Current Assignee Address: DK Alleroed
  • Agency: Fish & Richardson P.C.
  • Main IPC: H01L21/4763
  • IPC: H01L21/4763
Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane
Abstract:
Providing through-wafer interconnections in a semiconductor wafer includes forming a sacrificial membrane in a pre-existing semiconductor wafer, depositing metallization over one side of the wafer so as to cover exposed portions of the sacrificial membrane facing the one side of the wafer, removing exposed portions of the sacrificial membrane facing the other side of the wafer, and depositing metallization over the other side of the wafer so as to contact the previously deposited metallization. Techniques also are disclosed for providing capacitive and other structures using thin metal membranes.
Abstract(Chinese):

在半导体晶片中提供跨晶片互连包括在预先存在的半导体晶片中形成牺牲膜，在晶片的一侧上沉积金属化，以便覆盖面向晶片一侧的牺牲膜的暴露部分， 牺牲膜的部分面向晶片的另一侧，并且在晶片的另一侧上沉积金属化以​​便接触先前沉积的金属化。 公开了用于使用薄金属膜提供电容和其它结构的技术。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）
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