Semiconductor device production method that includes forming a gold interconnection layer

Invention Grant

US07662713B2 Semiconductor device production method that includes forming a gold interconnection layer 有权

Title translation: 包括形成金互连层的半导体器件制造方法

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Patent Title: Semiconductor device production method that includes forming a gold interconnection layer
Patent Title (中): 包括形成金互连层的半导体器件制造方法
Application No.: US12005383

Application Date: 2007-12-27
Publication No.: US07662713B2

Publication Date: 2010-02-16
Inventor: Goro Nakatani , Hitoshi Tamura
Applicant: Goro Nakatani , Hitoshi Tamura
Applicant Address: JP Kyoto
Assignee: Rohm Co., Ltd.
Current Assignee: Rohm Co., Ltd.
Current Assignee Address: JP Kyoto
Agency: Rabin & Berdo, PC
Priority: JP2003-314240 20030905
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device production method that includes forming a gold interconnection layer

Abstract:

A semiconductor device provided with: a first interconnection layer provided on a semiconductor substrate; an interlevel insulation film provided over the first interconnection layer; a barrier layer provided between the first interconnection layer and the interlevel insulation film; and a second interconnection layer of gold provided as an uppermost interconnection layer on the interlevel insulation film. The barrier layer is formed in a region of the first interconnection layer including an interlevel connection opening region of the interlevel insulation, and the region is greater than the interlevel connection opening region. The second interconnection layer is electrically connected to the first interconnection layer via the barrier layer in the interlevel connection opening.

Abstract(Chinese):

一种半导体器件，具备：设置在半导体衬底上的第一互连层; 设置在所述第一互连层上的层间绝缘膜; 设置在所述第一互连层和所述层间绝缘膜之间的阻挡层; 以及在层间绝缘膜上设置为最上层互连层的金的第二互连层。阻挡层形成在第一互连层的包含层间绝缘体的层间连接开口区域的区域中，并且该区域大于层间连接开口区域。第二互连层通过层间连接开口中的阻挡层电连接到第一互连层。

Public/Granted literature

US20080116577A1 Semiconductor device and production method therefor Public/Granted day:2008-05-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）