Invention Grant
US07662725B2 Composition for etching double metal layer, method of fabricating array substrate using the composition, and method of forming double metal line using the composition
有权
用于蚀刻双金属层的组合物，使用该组合物制造阵列基板的方法，以及使用该组合物形成双金属线的方法
- Patent Title: Composition for etching double metal layer, method of fabricating array substrate using the composition, and method of forming double metal line using the composition
- Patent Title (中): 用于蚀刻双金属层的组合物，使用该组合物制造阵列基板的方法，以及使用该组合物形成双金属线的方法
-
Application No.: US11287220Application Date: 2005-11-28
-
Publication No.: US07662725B2Publication Date: 2010-02-16
- Inventor: Oh-Nam Kwon
- Applicant: Oh-Nam Kwon
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Morgan Lewis & Bockius LLP
- Priority: KR10-2004-0104387 20041210
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A composition for etching a double metal layer, a method of fabricating an array substrate using the composition, and a method of forming a double metal line using the composition are provided. The composition includes about 63.5% to about 64.5% by weight of a phosphoric acid; about 8% to about 9% by weight of a nitric acid; about 8% to about 12% by weight of an acetic acid; and an anionic additive.
Public/Granted literature
Information query
IPC分类:
