Invention Grant
- Patent Title: Integrated circuit device having a gas-phase deposited insulation layer
- Patent Title (中): 具有气相沉积绝缘层的集成电路器件
-
Application No.: US11854877Application Date: 2007-09-13
-
Publication No.: US07662726B2Publication Date: 2010-02-16
- Inventor: Joachim Mahler , Henrik Ewe , Manfred Mengel
- Applicant: Joachim Mahler , Henrik Ewe , Manfred Mengel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/16
Abstract:
An integrated circuit device includes a semiconductor device having an integrated circuit. A gas-phase deposited insulation layer is disposed on the semiconductor device, and a conducting line is disposed over the gas-phase deposited insulation layer.
Public/Granted literature
- US20090072415A1 INTEGRATED CIRCUIT DEVICE HAVING A GAS-PHASE DEPOSITED INSULATION LAYER Public/Granted day:2009-03-19
Information query
IPC分类:
