Invention Grant
US07662729B2 Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
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将钌层原子层沉积到镧系元素氧化物介电层上
- Patent Title: Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
- Patent Title (中): 将钌层原子层沉积到镧系元素氧化物介电层上
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Application No.: US11117125Application Date: 2005-04-28
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Publication No.: US07662729B2Publication Date: 2010-02-16
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/469
- IPC: H01L21/469
Abstract:
Electronic apparatus and methods of forming the electronic apparatus include a conductive layer having a layer of ruthenium in contact with a lanthanide oxide dielectric layer for use in a variety of electronic systems. The lanthanide oxide dielectric layer and the layer of ruthenium may be structured as one or more monolayers. The lanthanide oxide dielectric layer and the layer of ruthenium may be formed by atomic layer deposition.
Public/Granted literature
- US20060244082A1 Atomic layer desposition of a ruthenium layer to a lanthanide oxide dielectric layer Public/Granted day:2006-11-02
Information query
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