Invention Grant
US07663143B2 Thin film transistor having a short channel formed by using an exposure mask with slits
有权
具有通过使用具有狭缝的曝光掩模形成的短沟道的薄膜晶体管
- Patent Title: Thin film transistor having a short channel formed by using an exposure mask with slits
- Patent Title (中): 具有通过使用具有狭缝的曝光掩模形成的短沟道的薄膜晶体管
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Application No.: US11287188Application Date: 2005-11-28
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Publication No.: US07663143B2Publication Date: 2010-02-16
- Inventor: Kwang-Jo Hwang
- Applicant: Kwang-Jo Hwang
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR2001/21463 20010420
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A mask containing apertures therein which is used for fabricating a channel of a thin film transistor (TFT), wherein the pixel charging time for a TFT in a high-resolution liquid crystal display (LCD) device is reduced by minimizing the length of the channel in the TFT when the active region is made of amorphous silicon. The length of the channel can be minimized by exposing light through the apertures in an exposure mask when forming the channel.
Public/Granted literature
- US20060071216A1 Thin film transistor having a short channel formed by using an exposure mask with slits Public/Granted day:2006-04-06
Information query
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