Invention Grant
- Patent Title: Compound semiconductor device and doherty amplifier using compound semiconductor device
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Application No.: US12071219Application Date: 2008-02-19
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Publication No.: US07663162B2Publication Date: 2010-02-16
- Inventor: Toshihide Kikkawa , Kenji Imanishi
- Applicant: Toshihide Kikkawa , Kenji Imanishi
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2007-048053 20070227
- Main IPC: H01L29/74
- IPC: H01L29/74
Abstract:
A lower electron supply layer is disposed over a lower electron transport layer made of compound semiconductor. The lower electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the lower electron transport layer. An upper electron transport layer is disposed over the lower electron supply layer. The upper electron transport layer is made of compound semiconductor having a doping concentration lower than that of the lower electron supply layer or non-doped compound semiconductor. An upper electron supply layer is disposed over the upper electron transport layer. The upper electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the upper electron transport layer. A source and drain electrodes are disposed over the upper electron supply layer. A gate electrode is disposed over the upper electron supply layer between the source and drain electrodes.
Public/Granted literature
- US20080204140A1 Compound semiconductor device and doherty amplifier using compound semiconductor device Public/Granted day:2008-08-28
Information query
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