Invention Grant
US07663169B2 Photodiode array and production method thereof, and radiation detector
失效
光电二极管阵列及其制作方法及辐射探测器
- Patent Title: Photodiode array and production method thereof, and radiation detector
- Patent Title (中): 光电二极管阵列及其制作方法及辐射探测器
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Application No.: US10550682Application Date: 2004-03-25
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Publication No.: US07663169B2Publication Date: 2010-02-16
- Inventor: Katsumi Shibayama
- Applicant: Katsumi Shibayama
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2003-087894 20030327
- International Application: PCT/JP2004/004212 WO 20040325
- International Announcement: WO2004/086505 WO 20041007
- Main IPC: G01T1/20
- IPC: G01T1/20
Abstract:
A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposite surface side to an incident surface of light L to be detected, in the n-type silicon substrate 3. A resin film 6 for transmitting the light L to be detected is provided so as to cover at least regions corresponding to regions where the photodiodes 4 are formed, on the incident surface side of the light L to be detected, in the n-type silicon substrate 3.
Public/Granted literature
- US20070040192A1 Photodiode array and production method thereof, and radiation detector Public/Granted day:2007-02-22
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