Invention Grant
US07663173B1 Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage
有权
具有多晶填充沟槽作为控制栅极和完全隔离衬底的非易失性存储单元作为电荷存储
- Patent Title: Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage
- Patent Title (中): 具有多晶填充沟槽作为控制栅极和完全隔离衬底的非易失性存储单元作为电荷存储
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Application No.: US11652860Application Date: 2007-01-12
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Publication No.: US07663173B1Publication Date: 2010-02-16
- Inventor: Saurabh Desai , Natasha Lavrovskaya , Yuri Mirgorodski , Jeff Babcock
- Applicant: Saurabh Desai , Natasha Lavrovskaya , Yuri Mirgorodski , Jeff Babcock
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Vollrath & Associates
- Agent Jurgen Vollrath
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
In a non-volatile memory cell, charge is stored in a fully isolated substrate or floating bulk that forms a storage capacitor with a first poly strip and includes a second poly strip defining a read gate and a poly-filled trench defining a control gate.
Information query
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