Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12076990Application Date: 2008-03-26
-
Publication No.: US07663174B2Publication Date: 2010-02-16
- Inventor: Yoshiyuki Shibata
- Applicant: Yoshiyuki Shibata
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-023542 20030131
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
A first DRAM section including a first memory cell having a first capacitance and a second DRAM section including a second memory cell having a second capacitance different from the first capacitance are provided on the same semiconductor substrate.
Public/Granted literature
- US20080180986A1 Semiconductor device and method for manufacturing the same Public/Granted day:2008-07-31
Information query
IPC分类:
